IRFB9N30A hexfet ? power mosfet third generation hexfets from international rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. the to-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. the low thermal resistance and low package cost of the to-220 contribute to its wide acceptance throughout the industry. s d g parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 9.3 i d @ t c = 100c continuous drain current, v gs @ 10v 5.9 a i dm pulsed drain current ? 37 p d @t c = 25c power dissipation 96 w linear derating factor 0.77 w/c v gs gate-to-source voltage 30 v e as single pulse avalanche energy ? 160 mj i ar avalanche current ? 9.3 a e ar repetitive avalanche energy ? 9.6 mj dv/dt peak diode recovery dv/dt ? 4.6 v/ns t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew 10 lbf?in (1.1n?m) absolute maximum ratings parameter typ. max. units r q jc junction-to-case CCC 1.3 r q cs case-to-sink, flat, greased surface 0.50 CCC c/w r q ja junction-to-ambient CCC 62 thermal resistance v dss = 300v r ds(on) = 0.45 w i d = 9.3a t o -22 0 ab l dynamic dv/dt rating l repetitive avalanche rated l fast switching l ease of paraleling l simple drive requirements description 10/7/98 www.irf.com 1 pd- 91832
IRFB9N30A 2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 300 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.38 CCC v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance CCC CCC 0.45 w v gs = 10v, i d = 5.6a ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 6.6 CCC CCC s v ds = 50v, i d = 5.6a CCC CCC 25 a v ds = 300v, v gs = 0v CCC CCC 250 v ds = 240v, v gs = 0v, t j = 125c gate-to-source forward leakage CCC CCC 100 v gs = 30v gate-to-source reverse leakage CCC CCC -100 na v gs = -30v q g total gate charge CCC CCC 33 i d = 9.3a q gs gate-to-source charge CCC CCC 6.9 nc v ds = 240v q gd gate-to-drain ("miller") charge CCC CCC 12 v gs = 10v, see fig. 6 and 13 ? t d(on) turn-on delay time CCC 10 CCC v dd = 150v t r rise time CCC 25 CCC i d = 9.3a t d(off) turn-off delay time CCC 35 CCC r g = 12 w t f fall time CCC 29 CCC r d = 16 w ,see fig. 10 ? between lead, CCC CCC 6mm (0.25in.) from package and center of die contact c iss input capacitance CCC 920 CCC v gs = 0v c oss output capacitance CCC 160 CCC v ds = 25v c rss reverse transfer capacitance CCC 8.7 CCC pf ? = 1.0mhz, see fig. 5 c oss output capacitance CCC 1200 CCC v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance CCC 52 CCC v gs = 0v, v ds = 240v, ? = 1.0mhz c oss eff. effective output capacitance ? CCC 102 CCC v gs = 0v, v ds = 0v to 240v nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance CCC CCC s d g i gss ns 4.5 7.5 i dss drain-to-source leakage current ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) ? i sd 9.3a, di/dt 270a/s, v dd v (br)dss , t j 150c notes: ? starting t j = 25c, l = 3.7mh r g = 25 w , i as = 9.3a. (see figure 12) ? pulse width 300s; duty cycle 2%. s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.5 v t j = 25c, i s = 9.3a, v gs = 0v ? t rr reverse recovery time CCC 280 420 ns t j = 25c, i f = 9.3a q rr reverse recoverycharge CCC 1.5 2.3 c di/dt = 100a/s ? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 9.3 37 a ? c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss
IRFB9N30A www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 1 10 100 20 s pulse width t = 150 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 4.0 5.0 6.0 7.0 8.0 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 9.3a
IRFB9N30A 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.0 0.4 0.8 1.2 1.6 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 10000 100000 1 10 100 1000 c, capacitance (pf) ds v , drain-to-source volta g e ( v ) a v = 0v, f = 1mhz c = c + c , c s ho rted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 10 20 30 40 0 4 8 12 16 20 q , total gate char g e (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 9.3a v = 60v ds v = 150v ds v = 240v ds 0.1 1 10 100 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source volta g e (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms
IRFB9N30A www.irf.com 5 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0.0 2.0 4.0 6.0 8.0 10.0 t , case temperature ( c) i , drain current (a) c d
IRFB9N30A 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 10 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v fig 12d. typical drain-to-source voltage vs. avalanche current 340 360 380 400 0246810 a dsav av i , avalanche current ( a ) v , avalanche voltage (v) 25 50 75 100 125 150 0 100 200 300 400 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 4.2a 5.9a 9.3a
IRFB9N30A www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? *
IRFB9N30A 8 www.irf.com lead assignments 1 - gate 2 - drain 3 - sou rc e 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) m in 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 d im e n s io n in g & to l e r a n c ing p e r a n s i y 1 4.5m , 1 9 82. 3 o u t lin e c o n f o r m s to je d e c o u t lin e to -2 20 a b . 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. part marking information to-220ab package outline to-220ab outline dimensions are shown in millimeters (inches) part number international rectifier lo g o example : this is an irf1010 w it h as se m b ly lo t c o de 9b1m assembly lo t co de date code (yyww) yy = year ww = week 9246 irf1010 9b 1m a world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 http://www.irf.com/ data and specifications subject to change without notice. 10/98
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